Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.apsusc.2014.11.180
| Title: | Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation | Authors: | Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J |
Keywords: | Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES |
Issue Date: | 15-Feb-2015 | Publisher: | ELSEVIER | Citation: | Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J (2015-02-15). Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation. APPLIED SURFACE SCIENCE 328 : 140-145. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2014.11.180 | Abstract: | © 2014 Elsevier B.V. All rights reserved. The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm 2 and below. | Source Title: | APPLIED SURFACE SCIENCE | URI: | https://scholarbank.nus.edu.sg/handle/10635/170787 | ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2014.11.180 |
| Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| paper 2 at imec .pdf | Published version | 1.03 MB | Adobe PDF | CLOSED | None |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.