Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2014.11.180
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dc.titleWet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
dc.contributor.authorMeddeb, H
dc.contributor.authorBearda, T
dc.contributor.authorPayo, M Recaman
dc.contributor.authorAbdelwahab, I
dc.contributor.authorAbdulraheem, Y
dc.contributor.authorEzzaouia, H
dc.contributor.authorGordon, I
dc.contributor.authorSzlufcik, J
dc.contributor.authorPoortmans, J
dc.date.accessioned2020-06-30T07:32:47Z
dc.date.available2020-06-30T07:32:47Z
dc.date.issued2015-02-15
dc.identifier.citationMeddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J (2015-02-15). Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation. APPLIED SURFACE SCIENCE 328 : 140-145. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2014.11.180
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/170787
dc.description.abstract© 2014 Elsevier B.V. All rights reserved. The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm 2 and below.
dc.language.isoen
dc.publisherELSEVIER
dc.sourceElements
dc.subjectScience & Technology
dc.subjectPhysical Sciences
dc.subjectTechnology
dc.subjectChemistry, Physical
dc.subjectMaterials Science, Coatings & Films
dc.subjectPhysics, Applied
dc.subjectPhysics, Condensed Matter
dc.subjectChemistry
dc.subjectMaterials Science
dc.subjectPhysics
dc.subjectWet chemical cleaning
dc.subjectSurface treatment
dc.subjectIntrinsic amorphous silicon
dc.subjectBoron emitter
dc.subjectPassivat ion
dc.subjectAnnealing
dc.subjectP-TYPE
dc.subjectRECOMBINATION
dc.subjectINTERFACES
dc.typeArticle
dc.date.updated2020-06-30T06:21:47Z
dc.contributor.departmentDEPT OF CHEMISTRY
dc.description.doi10.1016/j.apsusc.2014.11.180
dc.description.sourcetitleAPPLIED SURFACE SCIENCE
dc.description.volume328
dc.description.page140-145
dc.published.statePublished
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