Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168578
Title: Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces
Authors: Zeng, S. W. 
Yin, X. M. 
Herng, T. S. 
Han, K. 
Huang, Z. 
Zhang, L. C. 
Li, C. J. 
Zhou, W. X. 
Wan, D. Y. 
Yang, P. 
Ding, J. 
Wee, A. T. S. 
Coey, J. M. D. 
Venkatesan, T. 
Rusydi, A. 
Ariando, A. 
Issue Date: 5-Oct-2018
Publisher: American Physical Society
Citation: Zeng, S. W., Yin, X. M., Herng, T. S., Han, K., Huang, Z., Zhang, L. C., Li, C. J., Zhou, W. X., Wan, D. Y., Yang, P., Ding, J., Wee, A. T. S., Coey, J. M. D., Venkatesan, T., Rusydi, A., Ariando, A. (2018-10-05). Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces. PHYSICAL REVIEW LETTERS 121 (14). ScholarBank@NUS Repository.
Abstract: Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, x-ray absorption spectroscopy, and photoluminescence spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces. © 2018 American Physical Society.
Source Title: PHYSICAL REVIEW LETTERS
URI: https://scholarbank.nus.edu.sg/handle/10635/168578
ISSN: 00319007
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces.pdf1.26 MBAdobe PDF

OPEN

Post-printView/Download

Page view(s)

38
checked on Aug 13, 2020

Download(s)

2
checked on Aug 13, 2020

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.