Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168578
DC FieldValue
dc.titleOxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces
dc.contributor.authorZeng, S. W.
dc.contributor.authorYin, X. M.
dc.contributor.authorHerng, T. S.
dc.contributor.authorHan, K.
dc.contributor.authorHuang, Z.
dc.contributor.authorZhang, L. C.
dc.contributor.authorLi, C. J.
dc.contributor.authorZhou, W. X.
dc.contributor.authorWan, D. Y.
dc.contributor.authorYang, P.
dc.contributor.authorDing, J.
dc.contributor.authorWee, A. T. S.
dc.contributor.authorCoey, J. M. D.
dc.contributor.authorVenkatesan, T.
dc.contributor.authorRusydi, A.
dc.contributor.authorAriando, A.
dc.date.accessioned2020-05-28T03:16:57Z
dc.date.available2020-05-28T03:16:57Z
dc.date.issued2018-10-05
dc.identifier.citationZeng, S. W., Yin, X. M., Herng, T. S., Han, K., Huang, Z., Zhang, L. C., Li, C. J., Zhou, W. X., Wan, D. Y., Yang, P., Ding, J., Wee, A. T. S., Coey, J. M. D., Venkatesan, T., Rusydi, A., Ariando, A. (2018-10-05). Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces. PHYSICAL REVIEW LETTERS 121 (14). ScholarBank@NUS Repository.
dc.identifier.issn00319007
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/168578
dc.description.abstractElectrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, x-ray absorption spectroscopy, and photoluminescence spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces. © 2018 American Physical Society.
dc.publisherAmerican Physical Society
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.description.sourcetitlePHYSICAL REVIEW LETTERS
dc.description.volume121
dc.description.issue14
dc.published.statePublished
dc.grant.idNRF-CRP15-2015-01
dc.grant.fundingagencyNational Research Foundation
Appears in Collections:Elements
Staff Publications

Show simple item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces.pdf1.26 MBAdobe PDF

OPEN

Post-printView/Download

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.