Spin-Transfer Torque Memories: Devices, Circuits, and Systems

Abstract

© 2016 IEEE. Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent integration density, acceptable read and write performance, and compatibility with CMOS process technology. However, several obstacles need to be overcome for STT-MRAM to become the universal memory technology. This paper first reviews the fundamentals of STT-MRAM and discusses key experimental breakthroughs. The state of the art in STT-MRAM is then discussed, beginning with the device design concepts and challenges. The corresponding bit-cell design solutions are also presented, followed by the STT-MRAM cache architectures suitable for on-chip applications.