Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCAD.2015.2481793
Title: Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives
Authors: Fong, Xuanyao 
Kim, Yusung
Yogendra, Karthik
Fan, Deliang
Sengupta, Abhronil
Raghunathan, Anand
Roy, Kaushik
Keywords: Science & Technology
Technology
Computer Science, Hardware & Architecture
Computer Science, Interdisciplinary Applications
Engineering, Electrical & Electronic
Computer Science
Engineering
Boolean logic
magnetic tunnel junction (MTJ)
neuromorphic computing
non-Boolean logic
nonvolatile memory
post-CMOS
spin-transfer torque (STT)
spintronics
DOMAIN-WALL MOTION
MAGNETIC TUNNEL-JUNCTIONS
NONVOLATILE FLIP-FLOP
STT-MRAM
ORBIT TORQUES
INJECTION LOCKING
ELECTRIC-CURRENT
PHASE-LOCKING
DRIVEN
MAGNETORESISTANCE
Issue Date: 1-Jan-2016
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Fong, Xuanyao, Kim, Yusung, Yogendra, Karthik, Fan, Deliang, Sengupta, Abhronil, Raghunathan, Anand, Roy, Kaushik (2016-01-01). Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 35 (1) : 1-22. ScholarBank@NUS Repository. https://doi.org/10.1109/TCAD.2015.2481793
Abstract: © 2015 IEEE. As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.
Source Title: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
URI: https://scholarbank.nus.edu.sg/handle/10635/156190
ISSN: 0278-0070
1937-4151
DOI: 10.1109/TCAD.2015.2481793
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