Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2014.2364232
Title: Laser Induced Magnetization Reversal for Detection in Optical Interconnects
Authors: Al Azim, Zubair
Fong, Xuanyao 
Ostler, Thomas
Chantrell, Roy
Roy, Kaushik
Keywords: Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
Magnetic tunnel junction (MTJ)
complementary metal-oxide-semiconductor (CMOS)
non-equilibrium green's function (NEGF)
rare earth (RE)-transition metal (TM) ferrimagnetic materials
Issue Date: 1-Dec-2014
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Al Azim, Zubair, Fong, Xuanyao, Ostler, Thomas, Chantrell, Roy, Roy, Kaushik (2014-12-01). Laser Induced Magnetization Reversal for Detection in Optical Interconnects. IEEE ELECTRON DEVICE LETTERS 35 (12) : 1317-1319. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2014.2364232
Abstract: © 2014 IEEE. Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this letter, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gb/s for a single link.
Source Title: IEEE ELECTRON DEVICE LETTERS
URI: https://scholarbank.nus.edu.sg/handle/10635/156180
ISSN: 0741-3106
1558-0563
DOI: 10.1109/LED.2014.2364232
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