Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0022-3727/49/7/075104
| Title: | Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices | Authors: | Whitcher, TJ Woon, KL Wong, WS Chanlek, N Nakajima, H Saisopa, T Songsiriritthigul, P |
Issue Date: | 25-Feb-2016 | Publisher: | IOP Publishing | Citation: | Whitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-02-25). Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices. Journal of Physics D: Applied Physics 49 (7) : 075104-075104. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/49/7/075104 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Source Title: | Journal of Physics D: Applied Physics | URI: | https://scholarbank.nus.edu.sg/handle/10635/155074 | ISSN: | 00223727 13616463 |
DOI: | 10.1088/0022-3727/49/7/075104 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International |
| Appears in Collections: | Staff Publications Elements |
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| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices.pdf | Published version | 1.05 MB | Adobe PDF | CLOSED | None |
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