Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/49/7/075104
Title: Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
Authors: Whitcher, TJ 
Woon, KL
Wong, WS
Chanlek, N
Nakajima, H
Saisopa, T
Songsiriritthigul, P
Issue Date: 25-Feb-2016
Publisher: IOP Publishing
Citation: Whitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-02-25). Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices. Journal of Physics D: Applied Physics 49 (7) : 075104-075104. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/49/7/075104
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Source Title: Journal of Physics D: Applied Physics
URI: https://scholarbank.nus.edu.sg/handle/10635/155074
ISSN: 00223727
13616463
DOI: 10.1088/0022-3727/49/7/075104
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
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