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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/49/7/075104
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dc.titleInterfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
dc.contributor.authorWhitcher, TJ
dc.contributor.authorWoon, KL
dc.contributor.authorWong, WS
dc.contributor.authorChanlek, N
dc.contributor.authorNakajima, H
dc.contributor.authorSaisopa, T
dc.contributor.authorSongsiriritthigul, P
dc.date.accessioned2019-06-03T04:56:11Z
dc.date.available2019-06-03T04:56:11Z
dc.date.issued2016-02-25
dc.identifier.citationWhitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-02-25). Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices. Journal of Physics D: Applied Physics 49 (7) : 075104-075104. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/49/7/075104
dc.identifier.issn00223727
dc.identifier.issn13616463
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/155074
dc.publisherIOP Publishing
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourceElements
dc.typeArticle
dc.date.updated2019-06-03T01:59:15Z
dc.contributor.departmentCENTRE FOR ADVANCED 2D MATERIALS
dc.description.doi10.1088/0022-3727/49/7/075104
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume49
dc.description.issue7
dc.description.page075104-075104
dc.published.statePublished
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