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|Title:||High-quality doped polycrystalline silicon using low-pressure chemical vapor deposition (LPCVD)||Authors:||Padhamnath, P
|Issue Date:||1-Jan-2018||Publisher:||Elsevier BV||Citation:||Padhamnath, P, Nandakumar, N, Kitz, BJ, Balaji, N, Naval, MJ, Shanmugam, V, Duttagupta, S (2018-01-01). High-quality doped polycrystalline silicon using low-pressure chemical vapor deposition (LPCVD). Energy Procedia 150 : 9-14. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2018.09.014||Abstract:||© 2018 Elsevier Ltd. In this work, analysis of n + and p + doped polycrystalline silicon (poly-Si) layers over in-situ grown interfacial silicon oxide (iOx) for use in passivated contact solar cells is presented. Both the poly-Si and the iOx are deposited using an industrial low-pressure chemical vapor deposition (LPCVD) tube furnace. The layers are deposited on planar Czochralski-grown silicon (Cz-Si) wafers and are analyzed for their thickness, in as-deposited and doped conditions. Outstanding surface passivation is demonstrated after n + and p + doping with appropriate capping layer after undergoing high-temperature firing. τ eff as high as 15 ms (n + poly-Si) and 3.1 ms (p + poly-Si) at an excess carrier density of 1x10 15 cm -3 are obtained. The iV oc values (at 1 sun) are in the range of 745 mV (n + poly-Si) and 730 mV (p + poly-Si) and ultra-low J 0 values of 1.4 fA/cm 2 (n + poly-Si) and 7 fA/cm 2 (p + poly-Si) are obtained.||Source Title:||Energy Procedia||URI:||https://scholarbank.nus.edu.sg/handle/10635/155039||ISSN:||1876-6102||DOI:||10.1016/j.egypro.2018.09.014|
|Appears in Collections:||Staff Publications|
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