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|Title:||Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations||Authors:||Dutta Gupta, S.
De Jaeger, B.
|Issue Date:||2012||Citation:||Dutta Gupta, S., Biswas, A., Mitard, J., Eneman, G., De Jaeger, B., Meuris, M., Heyns, M.M. (2012). Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations. Proceedings of SPIE - The International Society for Optical Engineering 8549 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.926877||Abstract:||Device characteristics for long-channel Ge-pMOSFETs with different channel-orientations and figures of merit for analog applications are reported. The electrical characteristics include the capacitance-voltage curve at frequency 500 kHz and the transfer characteristics for both the low and high drain voltages. Various device parameters of Ge pMOSFETs have been extracted utilizing the measured data for both the regular i. e., Ge||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/128758||ISBN:||9780819493002||ISSN:||1996756X||DOI:||10.1117/12.926877|
|Appears in Collections:||Staff Publications|
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