Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations

Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.926877

Title:	Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations
Authors:	Dutta Gupta, S. Biswas, A. Mitard, J. Eneman, G. De Jaeger, B. Meuris, M. Heyns, M.M.
Issue Date:	2012
Citation:	Dutta Gupta, S., Biswas, A., Mitard, J., Eneman, G., De Jaeger, B., Meuris, M., Heyns, M.M. (2012). Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations. Proceedings of SPIE - The International Society for Optical Engineering 8549 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.926877
Abstract:	Device characteristics for long-channel Ge-pMOSFETs with different channel-orientations and figures of merit for analog applications are reported. The electrical characteristics include the capacitance-voltage curve at frequency 500 kHz and the transfer characteristics for both the low and high drain voltages. Various device parameters of Ge pMOSFETs have been extracted utilizing the measured data for both the regular i. e., Ge
Source Title:	Proceedings of SPIE - The International Society for Optical Engineering
URI:	http://scholarbank.nus.edu.sg/handle/10635/128758
ISBN:	9780819493002
ISSN:	1996756X
DOI:	10.1117/12.926877
Appears in Collections:	Staff Publications

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