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Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.926877
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dc.titleDevice characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations
dc.contributor.authorDutta Gupta, S.
dc.contributor.authorBiswas, A.
dc.contributor.authorMitard, J.
dc.contributor.authorEneman, G.
dc.contributor.authorDe Jaeger, B.
dc.contributor.authorMeuris, M.
dc.contributor.authorHeyns, M.M.
dc.date.accessioned2016-10-19T08:44:50Z
dc.date.available2016-10-19T08:44:50Z
dc.date.issued2012
dc.identifier.citationDutta Gupta, S., Biswas, A., Mitard, J., Eneman, G., De Jaeger, B., Meuris, M., Heyns, M.M. (2012). Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations. Proceedings of SPIE - The International Society for Optical Engineering 8549 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.926877
dc.identifier.isbn9780819493002
dc.identifier.issn1996756X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/128758
dc.description.abstractDevice characteristics for long-channel Ge-pMOSFETs with different channel-orientations and figures of merit for analog applications are reported. The electrical characteristics include the capacitance-voltage curve at frequency 500 kHz and the transfer characteristics for both the low and high drain voltages. Various device parameters of Ge pMOSFETs have been extracted utilizing the measured data for both the regular i. e., Ge
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.926877
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1117/12.926877
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume8549
dc.description.page-
dc.description.codenPSISD
dc.identifier.isiut000322913300072
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