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https://doi.org/10.1016/j.matlet.2015.05.001
| Title: | Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application | Authors: | Kumar G.D. Chakraborty S. Mahata C. Amin Bhuiyan M. Dong J. Iskander A. Masudy-Panah S. Dinda S. Bin Yang R. Lee T. Chi D. Kean Chia C. |
Issue Date: | 2015 | Publisher: | Elsevier | Citation: | Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters 156 : 105-108. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2015.05.001 | Source Title: | Materials Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/127612 | ISSN: | 0167577X | DOI: | 10.1016/j.matlet.2015.05.001 |
| Appears in Collections: | Staff Publications |
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