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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2015.05.001
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dc.titleAtomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application
dc.contributor.authorKumar G.D.
dc.contributor.authorChakraborty S.
dc.contributor.authorMahata C.
dc.contributor.authorAmin Bhuiyan M.
dc.contributor.authorDong J.
dc.contributor.authorIskander A.
dc.contributor.authorMasudy-Panah S.
dc.contributor.authorDinda S.
dc.contributor.authorBin Yang R.
dc.contributor.authorLee T.
dc.contributor.authorChi D.
dc.contributor.authorKean Chia C.
dc.date.accessioned2016-09-09T01:03:38Z
dc.date.available2016-09-09T01:03:38Z
dc.date.issued2015
dc.identifier.citationKumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters 156 : 105-108. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2015.05.001
dc.identifier.issn0167577X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/127612
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.matlet.2015.05.001
dc.publisherElsevier
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.matlet.2015.05.001
dc.description.sourcetitleMaterials Letters
dc.description.volume156
dc.description.page105-108
dc.identifier.isiut000357550300029
dc.published.statepublished
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