Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2015.05.001
Title: Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application
Authors: Kumar G.D.
Chakraborty S. 
Mahata C.
Amin Bhuiyan M.
Dong J.
Iskander A.
Masudy-Panah S.
Dinda S.
Bin Yang R.
Lee T.
Chi D.
Kean Chia C.
Issue Date: 2015
Publisher: Elsevier
Source: Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters 156 : 105-108. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2015.05.001
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/127612
ISSN: 0167577X
DOI: 10.1016/j.matlet.2015.05.001
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

13
checked on Feb 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.