Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2015.05.001
Title: Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application
Authors: Kumar G.D.
Chakraborty S. 
Mahata C.
Amin Bhuiyan M.
Dong J.
Iskander A.
Masudy-Panah S.
Dinda S.
Bin Yang R.
Lee T.
Chi D.
Kean Chia C.
Issue Date: 2015
Publisher: Elsevier
Citation: Kumar G.D., Chakraborty S., Mahata C., Amin Bhuiyan M., Dong J., Iskander A., Masudy-Panah S., Dinda S., Bin Yang R., Lee T., Chi D., Kean Chia C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters 156 : 105-108. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2015.05.001
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/127612
ISSN: 0167577X
DOI: 10.1016/j.matlet.2015.05.001
Appears in Collections:Staff Publications

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