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https://doi.org/10.1016/j.tsf.2006.07.122
Title: | 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy | Authors: | Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S. |
Keywords: | Dilute nitride Epitaxy Photodetector |
Issue Date: | 26-Mar-2007 | Citation: | Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2007-03-26). 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy. Thin Solid Films 515 (10) : 4441-4444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.122 | Abstract: | GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNxSby in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼ 0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p-i-n device between 0.9 and 1.1 μm. The dark current is ∼ 70 nA at a reverse bias of 2 V and the cutoff wavelength reaches ∼ 1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p-i-n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p-i-n devices. © 2006 Elsevier B.V. All rights reserved. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/116185 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2006.07.122 |
Appears in Collections: | Staff Publications |
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