Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.122
Title: 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
Authors: Cheah, W.K.
Fan, W.J.
Yoon, S.F.
Zhang, D.H.
Ng, B.K.
Loke, W.K.
Liu, R. 
Wee, A.T.S. 
Keywords: Dilute nitride
Epitaxy
Photodetector
Issue Date: 26-Mar-2007
Source: Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2007-03-26). 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy. Thin Solid Films 515 (10) : 4441-4444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.122
Abstract: GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNxSby in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼ 0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p-i-n device between 0.9 and 1.1 μm. The dark current is ∼ 70 nA at a reverse bias of 2 V and the cutoff wavelength reaches ∼ 1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p-i-n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p-i-n devices. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/116185
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.122
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Feb 15, 2018

WEB OF SCIENCETM
Citations

1
checked on Jan 30, 2018

Page view(s)

76
checked on Feb 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.