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|Title:||1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy|
|Citation:||Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2007-03-26). 1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy. Thin Solid Films 515 (10) : 4441-4444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.122|
|Abstract:||GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNxSby in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼ 0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p-i-n device between 0.9 and 1.1 μm. The dark current is ∼ 70 nA at a reverse bias of 2 V and the cutoff wavelength reaches ∼ 1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p-i-n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p-i-n devices. © 2006 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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