Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1785861
Title: Ba 0.5Sr 0.5TiO 3-Bi 1.5Zn 1.0Nb 1.5O 7 composite thin films with promising microwave dielectric properties for microwave device applications
Authors: Yan, L. 
Kong, L.B. 
Chen, L.F. 
Chong, K.B.
Tan, C.Y. 
Ong, C.K. 
Issue Date: 18-Oct-2004
Citation: Yan, L., Kong, L.B., Chen, L.F., Chong, K.B., Tan, C.Y., Ong, C.K. (2004-10-18). Ba 0.5Sr 0.5TiO 3-Bi 1.5Zn 1.0Nb 1.5O 7 composite thin films with promising microwave dielectric properties for microwave device applications. Applied Physics Letters 85 (16) : 3522-3524. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1785861
Abstract: Crack-free, dense, and uniform Ba 0.5Sr 0.5TiO 3(BST)-Bi 1.5Zn 1.0,Nb 1.5,O 7(BZN) composite thin films were deposited on (100) LaAlO 3, (100) SrTiO 3, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave (∼7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at ∼8.1 kV/cm, respectively. The good physical and electrical properties of the BST-BZN composite thin films make them promising candidates for microwave device applications. © 2004 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/115603
ISSN: 00036951
DOI: 10.1063/1.1785861
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