Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1785861
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dc.titleBa 0.5Sr 0.5TiO 3-Bi 1.5Zn 1.0Nb 1.5O 7 composite thin films with promising microwave dielectric properties for microwave device applications
dc.contributor.authorYan, L.
dc.contributor.authorKong, L.B.
dc.contributor.authorChen, L.F.
dc.contributor.authorChong, K.B.
dc.contributor.authorTan, C.Y.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-12-12T07:29:55Z
dc.date.available2014-12-12T07:29:55Z
dc.date.issued2004-10-18
dc.identifier.citationYan, L., Kong, L.B., Chen, L.F., Chong, K.B., Tan, C.Y., Ong, C.K. (2004-10-18). Ba 0.5Sr 0.5TiO 3-Bi 1.5Zn 1.0Nb 1.5O 7 composite thin films with promising microwave dielectric properties for microwave device applications. Applied Physics Letters 85 (16) : 3522-3524. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1785861
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115603
dc.description.abstractCrack-free, dense, and uniform Ba 0.5Sr 0.5TiO 3(BST)-Bi 1.5Zn 1.0,Nb 1.5,O 7(BZN) composite thin films were deposited on (100) LaAlO 3, (100) SrTiO 3, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave (∼7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at ∼8.1 kV/cm, respectively. The good physical and electrical properties of the BST-BZN composite thin films make them promising candidates for microwave device applications. © 2004 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1785861
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1063/1.1785861
dc.description.sourcetitleApplied Physics Letters
dc.description.volume85
dc.description.issue16
dc.description.page3522-3524
dc.description.codenAPPLA
dc.identifier.isiut000224658100061
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