Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1883712
| Title: | Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films | Authors: | Zheng, Y.B. Wang, S.J. Huan, A.C.H. Tan, C.Y. Yan, L. Ong, C.K. |
Issue Date: | 14-Mar-2005 | Citation: | Zheng, Y.B., Wang, S.J., Huan, A.C.H., Tan, C.Y., Yan, L., Ong, C.K. (2005-03-14). Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1883712 | Abstract: | The Al2O3-incoporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration. © 2005 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/114991 | ISSN: | 00036951 | DOI: | 10.1063/1.1883712 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
23
checked on Jul 19, 2019
WEB OF SCIENCETM
Citations
19
checked on Jul 19, 2019
Page view(s)
154
checked on Jul 19, 2019
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.