Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1883712

Title:	Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films
Authors:	Zheng, Y.B. Wang, S.J. Huan, A.C.H. Tan, C.Y. Yan, L. Ong, C.K.
Issue Date:	14-Mar-2005
Citation:	Zheng, Y.B., Wang, S.J., Huan, A.C.H., Tan, C.Y., Yan, L., Ong, C.K. (2005-03-14). Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1883712
Abstract:	The Al2O3-incoporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration. © 2005 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/114991
ISSN:	00036951
DOI:	10.1063/1.1883712
Appears in Collections:	Staff Publications

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