Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1883712
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dc.titleAl2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films
dc.contributor.authorZheng, Y.B.
dc.contributor.authorWang, S.J.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorTan, C.Y.
dc.contributor.authorYan, L.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-12-12T07:09:40Z
dc.date.available2014-12-12T07:09:40Z
dc.date.issued2005-03-14
dc.identifier.citationZheng, Y.B., Wang, S.J., Huan, A.C.H., Tan, C.Y., Yan, L., Ong, C.K. (2005-03-14). Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1883712
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114991
dc.description.abstractThe Al2O3-incoporation effect on the crystal structure and band structure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 substrate has been investigated by x-ray diffraction, x-ray photoelectron spectroscopy, and UV-VIS spectrophotometer. The resultant band gaps (Eg) increase with the increase of Al concentration. The shift of the valence-band edge and the core-level spectra with the incorporation of Al indicates that the Al could reduce the oxygen vacancy concentration. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1883712
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1063/1.1883712
dc.description.sourcetitleApplied Physics Letters
dc.description.volume86
dc.description.issue11
dc.description.page1-3
dc.description.codenAPPLA
dc.identifier.isiut000228050700080
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