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|Title:||Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)||Authors:||Gao, X.
|Keywords:||Fe/Si(0 0 1)
Valence band photoemission
X-ray absorption spectroscopy
|Issue Date:||May-2006||Citation:||Gao, X., Qi, D., Tan, S.C., Wee, A.T.S., Yu, X., Moser, H.O. (2006-05). Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1). Journal of Electron Spectroscopy and Related Phenomena 151 (3) : 199-203. ScholarBank@NUS Repository. https://doi.org/10.1016/j.elspec.2005.12.006||Abstract:||To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure. © 2006 Elsevier B.V. All rights reserved.||Source Title:||Journal of Electron Spectroscopy and Related Phenomena||URI:||http://scholarbank.nus.edu.sg/handle/10635/113044||ISSN:||03682048||DOI:||10.1016/j.elspec.2005.12.006|
|Appears in Collections:||Staff Publications|
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