Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.elspec.2005.12.006
DC Field | Value | |
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dc.title | Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1) | |
dc.contributor.author | Gao, X. | |
dc.contributor.author | Qi, D. | |
dc.contributor.author | Tan, S.C. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Yu, X. | |
dc.contributor.author | Moser, H.O. | |
dc.date.accessioned | 2014-11-28T08:43:38Z | |
dc.date.available | 2014-11-28T08:43:38Z | |
dc.date.issued | 2006-05 | |
dc.identifier.citation | Gao, X., Qi, D., Tan, S.C., Wee, A.T.S., Yu, X., Moser, H.O. (2006-05). Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1). Journal of Electron Spectroscopy and Related Phenomena 151 (3) : 199-203. ScholarBank@NUS Repository. https://doi.org/10.1016/j.elspec.2005.12.006 | |
dc.identifier.issn | 03682048 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/113044 | |
dc.description.abstract | To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure. © 2006 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.elspec.2005.12.006 | |
dc.source | Scopus | |
dc.subject | Fe/Si(0 0 1) | |
dc.subject | Interface | |
dc.subject | Valence band photoemission | |
dc.subject | X-ray absorption spectroscopy | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | SINGAPORE SYNCHROTRON LIGHT SOURCE | |
dc.description.doi | 10.1016/j.elspec.2005.12.006 | |
dc.description.sourcetitle | Journal of Electron Spectroscopy and Related Phenomena | |
dc.description.volume | 151 | |
dc.description.issue | 3 | |
dc.description.page | 199-203 | |
dc.description.coden | JESRA | |
dc.identifier.isiut | 000236299300007 | |
Appears in Collections: | Staff Publications |
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