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Voon Yew Thean

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Policy:  Closed
Department:  DEAN'S OFFICE (ENGINEERING)
Funding Agency:  This work was supported by Agency for Science, Technology and Research (A*STAR), Singapore under its AME Programmatic Funds (A1892b0026 and A18A1B0045), National Research Foundation Grant RSS2015-003, and the Singapore Hybrid-Integrated Next-Generation μ-Electronics (SHINE) Centre hosted at the National University of Singapore (NUS)

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Issue DateTitleAuthor(s)
16-Mar-2022Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)Umesh Chand ; Chen Chun-Kuei; Manohar Lal ; Sonu Hooda; Hasita Veluri; Zihang Fang; Shih-Hao Tsai; Aaron Voon-Yew Thean