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Ramam, Akkipeddi

rp05480

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Full Name
Ramam, Akkipeddi
Variants
Raman, A.
Ramam, A.
Akkipeddi, R.
AKKIPEDDI, RAMAM
 
Main Affiliation
 
Faculty
 

Publications

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Date Issued:  [1950 TO 1999]

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Feb-1994Distribution of photoresist over GaAs mesa structuresRamam, A. ; Chua, S.J. 
21996Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAsChua, S.J. ; Ramam, A. ; Lim, N. ; Gopalakrishnan, R. ; Tan, K.L. 
31995Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide systemChoi, W.K. ; Chan, Y.M.; Ah, L.K.; Loh, F.C. ; Tan, K.L. ; Ramam, A. 
4Feb-1997Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysisAntoszewski, J.; Dell, J.M.; Faraone, L.; Tan, L.S. ; Raman, A. ; Chua, S.J. ; Holmes, D.S.; Lindemuth, J.R.; Meyer, J.R.
5May-1995Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance methodChoi, W.K. ; Ah, L.K.; Chan, Y.M.; Raman, A. 
6Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
7Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
82-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
915-Dec-1996Lattice vibrations in In1-x-yGaxAlxAs quaternary alloysRamam, A. ; Chua, S.J. 
10May-1997Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxyRamam, A. ; Chua, S.J. 
11May-1996Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. ; Ramam, A. 
121997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A. 
131997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A.