1. ScholarBank@NUS

Saeys,Mark

rp03793

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Saeys,Mark
(not current staff)
Variants
Saeys, M.
 
Main Affiliation
 
Faculty
 
Email
chesm@nus.edu.sg
 

Publications

Refined By:
Department:  CHEMICAL & BIOMOLECULAR ENGINEERING
Author:  Joachim, C.

Results 1-10 of 10 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
16-Apr-2009A NOR-AND quantum running gate moleculeRenaud, N.; Ito, M.; Shangguan, W. ; Saeys, M. ; Hliwa, M.; Joachim, C.
22008A theoretical study of atomic wires and atomic junctions created on a Molybdenum disulfide surfaceOtalvaro, D.M. ; Yong, K.S.; Tiwari, R.K.; Saeys, M. ; Joachim, C.
322-May-2008Calculation of the conductance of a finite atomic line of sulfur vacancies created on a molybdenum disulfide surfaceYong, K.S.; Otalvaro, D.M. ; Duchemin, I.; Saeys, M. ; Joachim, C.
418-May-2010Conductance decay of a surface hydrogen tunneling junction fabricated along a Si(001)- (2×1 ) -H atomic wireKawai, H.; Yeo, Y.K.; Saeys, M. ; Joachim, C.
526-Nov-2013Contacting a conjugated molecule with a surface dangling bond dimer on a hydrogenated Ge(001) surface allows imaging of the hidden ground electronic stateGodlewski, S.; Kolmer, M.; Kawai, H.; Such, B.; Zuzak, R.; Saeys, M. ; De Mendoza, P.; Echavarren, A.M.; Joachim, C.; Szymonski, M.
67-Mar-2012Dangling-bond logic gates on a Si(100)-(2×1)-H surfaceKawai, H.; Ample, F.; Wang, Q.; Yeo, Y.K.; Saeys, M. ; Joachim, C.
76-Sep-2012Electronic properties of STM-constructed dangling-bond dimer lines on a Ge(001)-(2×1):H surfaceKolmer, M.; Godlewski, S.; Kawai, H.; Such, B.; Krok, F.; Saeys, M. ; Joachim, C.; Szymonski, M.
84-May-2011Origin of the apparent (2×1) topography of the Si(100)-c(4×2) surface observed in low-temperature STM imagesManzano, C.; Soe, W.-H.; Kawai, H.; Saeys, M. ; Joachim, C.
915-Nov-2009Origin of the contrast inversion in the STM image of CO on Cu(1 1 1)Tiwari, R.K.; Otálvaro, D.M. ; Joachim, C.; Saeys, M. 
101-Aug-2008Surface reconstruction of MoS2 to Mo2S3Tiwari, R.K.; Yang, J.; Saeys, M. ; Joachim, C.