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|Title:||Origin of the apparent (2×1) topography of the Si(100)-c(4×2) surface observed in low-temperature STM images||Authors:||Manzano, C.
|Issue Date:||4-May-2011||Citation:||Manzano, C., Soe, W.-H., Kawai, H., Saeys, M., Joachim, C. (2011-05-04). Origin of the apparent (2×1) topography of the Si(100)-c(4×2) surface observed in low-temperature STM images. Physical Review B - Condensed Matter and Materials Physics 83 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.83.201302||Abstract:||Low-temperature scanning tunneling microscope (STM) images of the Si(100) surface showing apparent (2×1) atom dimer lines have recently been reported. Using experimental and theoretical approaches, it is demonstrated how those (2×1)-like images result from a c(4×2) surface reconstruction imaged at high bias voltages. In the STM junction, the surface contribution of 3px surface-state electronic resonances relative to the 3p z states is bias voltage dependent. The apparent (2×1) STM images result from an increase in the number of bulk Si electronic channels amplifying Si(100)-c(4×2) surface 3px surface states contribution to the tunneling current with respect to the one of 3pz states. © 2011 American Physical Society.||Source Title:||Physical Review B - Condensed Matter and Materials Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/89701||ISSN:||10980121||DOI:||10.1103/PhysRevB.83.201302|
|Appears in Collections:||Staff Publications|
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