Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
 
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Choi, W.K.
Author:  Ho, V.

Results 1-13 of 13 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12004Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2Ho, V.; Choi, W.K. ; Chim, W.K. ; Teo, L.W.; Du, A.Y.; Tung, C.H.
227-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
3Apr-2003Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structureHeng, C.L.; Teo, L.W.; Ho, V.; Tay, M.S.; Lei, Y.; Choi, W.K. ; Chim, W.K. 
4Apr-2003Electrical characterization of a trilayer germanium nanocrystal memory deviceHo, V.; Tay, M.S.; Moey, C.H.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Heng, C.L.; Lei, Y.
5Sep-2004Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectricNg, T.H.; Ho, V.; Teo, L.W.; Tay, M.S.; Koh, B.H.; Chim, W.K. ; Choi, W.K. ; Du, A.Y.; Tung, C.H.
62001Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 filmsChoi, W.K. ; Ng, V. ; Ho, Y.W.; Chen, T.B.; Ho, V.
72-Feb-2006Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealingChoi, W.K. ; Chew, H.G.; Ho, V.; Ng, V. ; Chim, W.K. ; Ho, Y.W.; Ng, S.P.
84-Apr-2005Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealingChoi, W.K. ; Ho, V.; Ng, V. ; Ho, Y.W.; Ng, S.P.; Chim, W.K. 
916-Dec-2005In situ transmission electron microscopy study on the formation and evolution of germanium nanoclusters and nanoparticles in silicon oxide matrixChoi, W.K. ; Foo, Y.L.; Ho, V.; Nath, R.
102002Manipulation of germanium nanocrystals in a tri-layer insulator structure of a metal-insulator-semiconductor memory deviceTeo, L.W.; Heng, C.L. ; Ho, V.; Tay, M.; Choi, W.K. ; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.
1131-May-2004Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectricNg, T.H.; Chim, W.K. ; Choi, W.K. ; Ho, V.; Teo, L.W.; Du, A.Y.; Tung, C.H.
1218-Mar-2002Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structureChoi, W.K. ; Chim, W.K. ; Heng, C.L.; Teo, L.W.; Ho, V.; Ng, V. ; Antoniadis, D.A.; Fitzgerald, E.A.
134-Nov-2002Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structureTeo, L.W.; Choi, W.K. ; Chim, W.K. ; Ho, V.; Moey, C.M.; Tay, M.S.; Heng, C.L. ; Lei, Y. ; Antoniadis, D.A.; Fitzgerald, E.A.