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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

Refined By:
Department:  MATERIALS SCIENCE
Date Issued:  [1995 TO 1999]

Results 1-20 of 35 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11996A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxyFeng, Z.C. ; Gong, H. ; Choyke, W.J.; Doyle, N.J.; Farrow, R.F.C.
21-May-1996A time-resolved current method for the investigation of charging ability of insulators under electron beam irradiationSong, Z.G.; Ong, C.K. ; Gong, H. 
33-Mar-1998Anisothermal oxidation of micro-crystalline Ni-20Cr-5Al alloy coating at 850-1280°CLiu, Z.; Gao, W.; Gong, H. 
41998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
5Jan-1996Backscattering factor for KLL Auger yield from film-substrate systemsLee, C.L. ; Kong, K.Y.; Gong, H. ; Ong, C.K. 
61997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
7Dec-1995Charging of deformed semicrystalline polymers observed with a scanning electron microscopeGong, H. ; Chooi, K.M.; Ong, C.K. 
81997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
91995Determination of charge distribution volume in electron irradiated insulators by scanning electron microscopeChen, H.; Gong, H. ; Ong, C.K. 
1017-Feb-1997Discharging behaviour on insulator surfaces in vacuum: A scanning electron microscopy observationGong, H. ; Ong, C.K. 
1127-Oct-1997Dynamics aspects of the charging behaviour of polymers under focused electron beam irradiationOng, C.K. ; Song, Z.G.; Gong, H. 
121999Effect of Cu contamination on electrical characteristics for PMOS transistorsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Chan, L.; See, A.K.
131997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
141999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
151999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
161-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
171998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
181997Insulator size effect on electron-irradiated quartzSong, Z.G.; Ong, C.K. ; Gong, H. 
199-Mar-1999Interaction between thin-film tin oxide gas sensor and five organic vaporsGong, H. ; Wang, Y.J.; Teo, S.C.; Huang, L. 
2015-Jul-1998Morphology and magnetic analysis of MnSb films grown by hot-wall epitaxyLow, B.L.; Ong, C.K. ; Han, G.C. ; Gong, H. ; Liew, T.Y.F. ; Tatsuoka, H.; Kuwabara, H.; Yang, Z.