Please use this identifier to cite or link to this item:
|Title:||Transport properties of high-performance all-Heusler Co 2CrSi/ Cu 2CrAl/Co 2CrSi giant magnetoresistance device||Authors:||Bai, Z.Q.
|Issue Date:||1-May-2012||Citation:||Bai, Z.Q., Lu, Y.H., Shen, L., Ko, V., Han, G.C., Feng, Y.P. (2012-05-01). Transport properties of high-performance all-Heusler Co 2CrSi/ Cu 2CrAl/Co 2CrSi giant magnetoresistance device. Journal of Applied Physics 111 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4712301||Abstract:||Transport properties of giant magnetoresistance (MR) junction consisting of trilayer Co 2CrSi/Cu 2CrAl/Co 2CrSi Heusler alloys (L2 1) are studied using first-principles approach based on density functional theory and the non-equilibrium Green's function method. Highly conductive channels are found in almost the entire k-plane when the magnetizations of the electrodes are parallel, while they are completely blocked in the antiparallel configuration, which leads to a high magnetoresistance ratio (the pessimistic MR ratio is nearly 100%). Furthermore, the calculated I-V curve shows that the device behaves as a good spin valve with a considerable disparity in currents under the parallel and antiparallel magnetic configurations of the electrodes. The Co 2CrSi/Cu 2CrAl/ Co 2CrSi junction could be useful for high-performance all-metallic current-perpendicular-to-plane giant magnetoresistance reading head for the next generation high density magnetic storage. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/98448||ISSN:||00218979||DOI:||10.1063/1.4712301|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 19, 2020
WEB OF SCIENCETM
checked on Feb 12, 2020
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.