Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4712301
Title: Transport properties of high-performance all-Heusler Co 2CrSi/ Cu 2CrAl/Co 2CrSi giant magnetoresistance device
Authors: Bai, Z.Q.
Lu, Y.H. 
Shen, L.
Ko, V.
Han, G.C.
Feng, Y.P. 
Issue Date: 1-May-2012
Citation: Bai, Z.Q., Lu, Y.H., Shen, L., Ko, V., Han, G.C., Feng, Y.P. (2012-05-01). Transport properties of high-performance all-Heusler Co 2CrSi/ Cu 2CrAl/Co 2CrSi giant magnetoresistance device. Journal of Applied Physics 111 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4712301
Abstract: Transport properties of giant magnetoresistance (MR) junction consisting of trilayer Co 2CrSi/Cu 2CrAl/Co 2CrSi Heusler alloys (L2 1) are studied using first-principles approach based on density functional theory and the non-equilibrium Green's function method. Highly conductive channels are found in almost the entire k-plane when the magnetizations of the electrodes are parallel, while they are completely blocked in the antiparallel configuration, which leads to a high magnetoresistance ratio (the pessimistic MR ratio is nearly 100%). Furthermore, the calculated I-V curve shows that the device behaves as a good spin valve with a considerable disparity in currents under the parallel and antiparallel magnetic configurations of the electrodes. The Co 2CrSi/Cu 2CrAl/ Co 2CrSi junction could be useful for high-performance all-metallic current-perpendicular-to-plane giant magnetoresistance reading head for the next generation high density magnetic storage. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98448
ISSN: 00218979
DOI: 10.1063/1.4712301
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