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https://doi.org/10.1021/nn204907t
Title: | Symmetrical negative differential resistance behavior of a resistive switching device | Authors: | Du, Y. Pan, H. Wang, S. Wu, T. Feng, Y.P. Pan, J. Wee, A.T.S. |
Keywords: | band gap state charge storage negative differential resistance oxygen molecular ions resistive switching titanium dioxide |
Issue Date: | 27-Mar-2012 | Citation: | Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S. (2012-03-27). Symmetrical negative differential resistance behavior of a resistive switching device. ACS Nano 6 (3) : 2517-2523. ScholarBank@NUS Repository. https://doi.org/10.1021/nn204907t | Abstract: | With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. © 2012 American Chemical Society. | Source Title: | ACS Nano | URI: | http://scholarbank.nus.edu.sg/handle/10635/98160 | ISSN: | 19360851 | DOI: | 10.1021/nn204907t |
Appears in Collections: | Staff Publications |
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