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|Title:||Symmetrical negative differential resistance behavior of a resistive switching device||Authors:||Du, Y.
|Keywords:||band gap state
negative differential resistance
oxygen molecular ions
|Issue Date:||27-Mar-2012||Citation:||Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S. (2012-03-27). Symmetrical negative differential resistance behavior of a resistive switching device. ACS Nano 6 (3) : 2517-2523. ScholarBank@NUS Repository. https://doi.org/10.1021/nn204907t||Abstract:||With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. © 2012 American Chemical Society.||Source Title:||ACS Nano||URI:||http://scholarbank.nus.edu.sg/handle/10635/98160||ISSN:||19360851||DOI:||10.1021/nn204907t|
|Appears in Collections:||Staff Publications|
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