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Title: Symmetrical negative differential resistance behavior of a resistive switching device
Authors: Du, Y.
Pan, H.
Wang, S.
Wu, T.
Feng, Y.P. 
Pan, J.
Wee, A.T.S. 
Keywords: band gap state
charge storage
negative differential resistance
oxygen molecular ions
resistive switching
titanium dioxide
Issue Date: 27-Mar-2012
Citation: Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S. (2012-03-27). Symmetrical negative differential resistance behavior of a resistive switching device. ACS Nano 6 (3) : 2517-2523. ScholarBank@NUS Repository.
Abstract: With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. © 2012 American Chemical Society.
Source Title: ACS Nano
ISSN: 19360851
DOI: 10.1021/nn204907t
Appears in Collections:Staff Publications

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