Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn204907t
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dc.titleSymmetrical negative differential resistance behavior of a resistive switching device
dc.contributor.authorDu, Y.
dc.contributor.authorPan, H.
dc.contributor.authorWang, S.
dc.contributor.authorWu, T.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorPan, J.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:43:43Z
dc.date.available2014-10-16T09:43:43Z
dc.date.issued2012-03-27
dc.identifier.citationDu, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S. (2012-03-27). Symmetrical negative differential resistance behavior of a resistive switching device. ACS Nano 6 (3) : 2517-2523. ScholarBank@NUS Repository. https://doi.org/10.1021/nn204907t
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98160
dc.description.abstractWith a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. © 2012 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn204907t
dc.sourceScopus
dc.subjectband gap state
dc.subjectcharge storage
dc.subjectnegative differential resistance
dc.subjectoxygen molecular ions
dc.subjectresistive switching
dc.subjecttitanium dioxide
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nn204907t
dc.description.sourcetitleACS Nano
dc.description.volume6
dc.description.issue3
dc.description.page2517-2523
dc.identifier.isiut000301945900067
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