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dc.titleSymmetrical negative differential resistance behavior of a resistive switching device
dc.contributor.authorDu, Y.
dc.contributor.authorPan, H.
dc.contributor.authorWang, S.
dc.contributor.authorWu, T.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorPan, J.
dc.contributor.authorWee, A.T.S.
dc.identifier.citationDu, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S. (2012-03-27). Symmetrical negative differential resistance behavior of a resistive switching device. ACS Nano 6 (3) : 2517-2523. ScholarBank@NUS Repository.
dc.description.abstractWith a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications. © 2012 American Chemical Society.
dc.subjectband gap state
dc.subjectcharge storage
dc.subjectnegative differential resistance
dc.subjectoxygen molecular ions
dc.subjectresistive switching
dc.subjecttitanium dioxide
dc.description.sourcetitleACS Nano
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