Study of electronic properties and bonding configuration at the BN/SiC interface

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0368-2048(00)00365-0

Title:	Study of electronic properties and bonding configuration at the BN/SiC interface
Authors:	Wang, H.-Q. Zheng, J.-C. Wee, A.T.S. Huan, C.H.A.
Issue Date:	Mar-2001
Citation:	Wang, H.-Q., Zheng, J.-C., Wee, A.T.S., Huan, C.H.A. (2001-03). Study of electronic properties and bonding configuration at the BN/SiC interface. Journal of Electron Spectroscopy and Related Phenomena 114-116 : 483-488. ScholarBank@NUS Repository. https://doi.org/10.1016/S0368-2048(00)00365-0
Abstract:	The electronic properties and bonding configuration at the interface between cubic (zinc blende) BN and 3C-SiC are studied using the first principle linear muffin-tin orbital (LMTO) method based on local-density-functional (LDA) theory. The (001) superlattice of BN(n)/SiC(n) (n = 1-6) is used to study the interface. The calculated results show that the preferred bonding configuration is Si-N and C-B for the (001) BN/SiC interface. The formation energy of the interface is studied as a function of thickness of the superlattice. The origin of the bond formation as well as the electronic properties of the interface are also investigated.
Source Title:	Journal of Electron Spectroscopy and Related Phenomena
URI:	http://scholarbank.nus.edu.sg/handle/10635/98088
ISSN:	03682048
DOI:	10.1016/S0368-2048(00)00365-0
Appears in Collections:	Staff Publications

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