Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0368-2048(00)00365-0
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dc.titleStudy of electronic properties and bonding configuration at the BN/SiC interface
dc.contributor.authorWang, H.-Q.
dc.contributor.authorZheng, J.-C.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.date.accessioned2014-10-16T09:42:50Z
dc.date.available2014-10-16T09:42:50Z
dc.date.issued2001-03
dc.identifier.citationWang, H.-Q., Zheng, J.-C., Wee, A.T.S., Huan, C.H.A. (2001-03). Study of electronic properties and bonding configuration at the BN/SiC interface. Journal of Electron Spectroscopy and Related Phenomena 114-116 : 483-488. ScholarBank@NUS Repository. https://doi.org/10.1016/S0368-2048(00)00365-0
dc.identifier.issn03682048
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98088
dc.description.abstractThe electronic properties and bonding configuration at the interface between cubic (zinc blende) BN and 3C-SiC are studied using the first principle linear muffin-tin orbital (LMTO) method based on local-density-functional (LDA) theory. The (001) superlattice of BN(n)/SiC(n) (n = 1-6) is used to study the interface. The calculated results show that the preferred bonding configuration is Si-N and C-B for the (001) BN/SiC interface. The formation energy of the interface is studied as a function of thickness of the superlattice. The origin of the bond formation as well as the electronic properties of the interface are also investigated.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0368-2048(00)00365-0
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0368-2048(00)00365-0
dc.description.sourcetitleJournal of Electron Spectroscopy and Related Phenomena
dc.description.volume114-116
dc.description.page483-488
dc.description.codenJESRA
dc.identifier.isiut000167832700073
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