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|Title:||Structural study of refractory-metal-free C40 TiSi2 and its transformation to C54 TiSi2||Authors:||Yu, T.
|Issue Date:||1-Apr-2002||Citation:||Yu, T., Tan, S.C., Shen, Z.X., Chen, L.W., Lin, J.Y., See, A.K. (2002-04-01). Structural study of refractory-metal-free C40 TiSi2 and its transformation to C54 TiSi2. Applied Physics Letters 80 (13) : 2266-2268. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1466521||Abstract:||The structure of laser-induced refractory-metal-free C40 TiSi2 has been studied by glancing-angle x-ray diffraction (GAXRD) in detail. The result shows that laser-induced C40 TiSi2 has a hexagonal structure with the P6222 space group and lattice parameters a=0.467 nm and c=0.662 nm. The ordering effect and the stress effect on the TiSi2 film are also discussed based on the GAXRD and micro-Raman results. The C40 phase completely transforms to the technologically important C54 phase at a relatively low temperature of 700°C. © 2002 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/98063||ISSN:||00036951||DOI:||10.1063/1.1466521|
|Appears in Collections:||Staff Publications|
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