Physical and electrical properties of single Zn2 Sn O 4 nanowires

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3505875

Title:	Physical and electrical properties of single Zn2 Sn O 4 nanowires
Authors:	Karthik, K.R.G. Andreasson, B.P. Sun, C. Pramana, S.S. Varghese, B. Sow, C.H. Mathews, N. Wong, L.H. Mhaisalkar, S.G.
Issue Date:	2011
Citation:	Karthik, K.R.G., Andreasson, B.P., Sun, C., Pramana, S.S., Varghese, B., Sow, C.H., Mathews, N., Wong, L.H., Mhaisalkar, S.G. (2011). Physical and electrical properties of single Zn2 Sn O 4 nanowires. Electrochemical and Solid-State Letters 14 (1) : K5-K7. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3505875
Abstract:	Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/97545
ISSN:	10990062
DOI:	10.1149/1.3505875
Appears in Collections:	Staff Publications

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