Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3505875
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dc.titlePhysical and electrical properties of single Zn2 Sn O 4 nanowires
dc.contributor.authorKarthik, K.R.G.
dc.contributor.authorAndreasson, B.P.
dc.contributor.authorSun, C.
dc.contributor.authorPramana, S.S.
dc.contributor.authorVarghese, B.
dc.contributor.authorSow, C.H.
dc.contributor.authorMathews, N.
dc.contributor.authorWong, L.H.
dc.contributor.authorMhaisalkar, S.G.
dc.date.accessioned2014-10-16T09:36:31Z
dc.date.available2014-10-16T09:36:31Z
dc.date.issued2011
dc.identifier.citationKarthik, K.R.G., Andreasson, B.P., Sun, C., Pramana, S.S., Varghese, B., Sow, C.H., Mathews, N., Wong, L.H., Mhaisalkar, S.G. (2011). Physical and electrical properties of single Zn2 Sn O 4 nanowires. Electrochemical and Solid-State Letters 14 (1) : K5-K7. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3505875
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97545
dc.description.abstractElectrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3505875
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1149/1.3505875
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume14
dc.description.issue1
dc.description.pageK5-K7
dc.description.codenESLEF
dc.identifier.isiut000284317600032
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