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https://scholarbank.nus.edu.sg/handle/10635/97441
| Title: | Optical characterization of ion-implanted 4H-SiC | Authors: | Feng, Z.C. Yan, F. Chang, W.Y. Zhao, J.H. Lin, J. |
Keywords: | 4H-SiC Al-C ions Annealing Crystallization FTIR Multi-energy implantation Optical transmission Photoluminescence Raman scattering |
Issue Date: | 2002 | Citation: | Feng, Z.C.,Yan, F.,Chang, W.Y.,Zhao, J.H.,Lin, J. (2002). Optical characterization of ion-implanted 4H-SiC. Materials Science Forum 389-393 (1) : 647-650. ScholarBank@NUS Repository. | Abstract: | 4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified. © 2002 Trans Tech Publications. | Source Title: | Materials Science Forum | URI: | http://scholarbank.nus.edu.sg/handle/10635/97441 | ISSN: | 02555476 |
| Appears in Collections: | Staff Publications |
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