Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/97441
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dc.titleOptical characterization of ion-implanted 4H-SiC
dc.contributor.authorFeng, Z.C.
dc.contributor.authorYan, F.
dc.contributor.authorChang, W.Y.
dc.contributor.authorZhao, J.H.
dc.contributor.authorLin, J.
dc.date.accessioned2014-10-16T09:35:19Z
dc.date.available2014-10-16T09:35:19Z
dc.date.issued2002
dc.identifier.citationFeng, Z.C.,Yan, F.,Chang, W.Y.,Zhao, J.H.,Lin, J. (2002). Optical characterization of ion-implanted 4H-SiC. Materials Science Forum 389-393 (1) : 647-650. ScholarBank@NUS Repository.
dc.identifier.issn02555476
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97441
dc.description.abstract4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified. © 2002 Trans Tech Publications.
dc.sourceScopus
dc.subject4H-SiC
dc.subjectAl-C ions
dc.subjectAnnealing
dc.subjectCrystallization
dc.subjectFTIR
dc.subjectMulti-energy implantation
dc.subjectOptical transmission
dc.subjectPhotoluminescence
dc.subjectRaman scattering
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleMaterials Science Forum
dc.description.volume389-393
dc.description.issue1
dc.description.page647-650
dc.description.codenMSFOE
dc.identifier.isiutNOT_IN_WOS
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