Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/97441
DC Field | Value | |
---|---|---|
dc.title | Optical characterization of ion-implanted 4H-SiC | |
dc.contributor.author | Feng, Z.C. | |
dc.contributor.author | Yan, F. | |
dc.contributor.author | Chang, W.Y. | |
dc.contributor.author | Zhao, J.H. | |
dc.contributor.author | Lin, J. | |
dc.date.accessioned | 2014-10-16T09:35:19Z | |
dc.date.available | 2014-10-16T09:35:19Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | Feng, Z.C.,Yan, F.,Chang, W.Y.,Zhao, J.H.,Lin, J. (2002). Optical characterization of ion-implanted 4H-SiC. Materials Science Forum 389-393 (1) : 647-650. ScholarBank@NUS Repository. | |
dc.identifier.issn | 02555476 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97441 | |
dc.description.abstract | 4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified. © 2002 Trans Tech Publications. | |
dc.source | Scopus | |
dc.subject | 4H-SiC | |
dc.subject | Al-C ions | |
dc.subject | Annealing | |
dc.subject | Crystallization | |
dc.subject | FTIR | |
dc.subject | Multi-energy implantation | |
dc.subject | Optical transmission | |
dc.subject | Photoluminescence | |
dc.subject | Raman scattering | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Materials Science Forum | |
dc.description.volume | 389-393 | |
dc.description.issue | 1 | |
dc.description.page | 647-650 | |
dc.description.coden | MSFOE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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