Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/97441
Title: Optical characterization of ion-implanted 4H-SiC
Authors: Feng, Z.C.
Yan, F.
Chang, W.Y.
Zhao, J.H.
Lin, J. 
Keywords: 4H-SiC
Al-C ions
Annealing
Crystallization
FTIR
Multi-energy implantation
Optical transmission
Photoluminescence
Raman scattering
Issue Date: 2002
Citation: Feng, Z.C.,Yan, F.,Chang, W.Y.,Zhao, J.H.,Lin, J. (2002). Optical characterization of ion-implanted 4H-SiC. Materials Science Forum 389-393 (1) : 647-650. ScholarBank@NUS Repository.
Abstract: 4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified. © 2002 Trans Tech Publications.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/97441
ISSN: 02555476
Appears in Collections:Staff Publications

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