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|Title:||Optical characterization of ion-implanted 4H-SiC||Authors:||Feng, Z.C.
|Issue Date:||2002||Citation:||Feng, Z.C.,Yan, F.,Chang, W.Y.,Zhao, J.H.,Lin, J. (2002). Optical characterization of ion-implanted 4H-SiC. Materials Science Forum 389-393 (1) : 647-650. ScholarBank@NUS Repository.||Abstract:||4H-SiC structures with both Al+ and C+Al+ implantation have been prepared by multiple energy implantation. They were studied by photoluminescence, optical transmission, micro-Raman scattering and Fourier transform infrared spectroscopy. The damage and amorphization of SiC layer by ion-implantation, and the elimination or suppression of the implantation induced amorphous layer via high temperature annealing are observed. After annealing, the solid-phase recrystallization is confirmed. The advantages of C/Al co-implantation over Al only ion-implantation is identified. © 2002 Trans Tech Publications.||Source Title:||Materials Science Forum||URI:||http://scholarbank.nus.edu.sg/handle/10635/97441||ISSN:||02555476|
|Appears in Collections:||Staff Publications|
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