Please use this identifier to cite or link to this item:
Title: NIR schottky photodetectors based on individual single-crystalline GeSe nanosheet
Authors: Mukherjee, B.
Cai, Y. 
Tan, H.R.
Feng, Y.P. 
Tok, E.S. 
Sow, C.H. 
Keywords: germanium monoselenide
layered compound
vapor deposition
Issue Date: 2013
Citation: Mukherjee, B., Cai, Y., Tan, H.R., Feng, Y.P., Tok, E.S., Sow, C.H. (2013). NIR schottky photodetectors based on individual single-crystalline GeSe nanosheet. ACS Applied Materials and Interfaces 5 (19) : 9594-9604. ScholarBank@NUS Repository.
Abstract: We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts under a global laser irradiation scheme. The nonlinearship, asymmetric, and unsaturated characteristics of the I-V curves reveal that two uneven back-to-back Schottky contacts are formed. First-principles calculations indicate that the occurrence of defects-induced in-gap defective states, which are responsible for the slow decay of the current in the OFF state and for the weak light intensity dependence of photocurrent. The Schottky photodetector exhibits a marked photoresponse to NIR light illumination (maximum photoconductive gain ∼5.3 × 102 % at 4 V) at a wavelength of 808 nm. The significant photoresponse and good responsitivity (∼3.5 A W-1) suggests its potential applications as photodetectors. © 2013 American Chemical Society.
Source Title: ACS Applied Materials and Interfaces
ISSN: 19448244
DOI: 10.1021/am402550s
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.