New resists for proton beam writing

Abstract

To explore the full capabilities of proton beam writing (PBW) as a lithographic tool it is important to investigate potential new resist materials. In PBW the interactions of the protons with the resist are comparable to the electron interactions with the resist in electron beam writing. In both techniques the induced secondary electrons will modify the molecular structure of the resist, therefore electron beam resists are potential candidates for PBW. Here we discuss resist properties such as contrast and sensitivity of two new negative resists for PBW. The first resist is a spin-coatable TiO2 resist for which sub 10 nm resolution has been reported using electron beam writing. In PBW smooth side walls have been observed for this resist. Despite a relative low sensitivity of this resist for PBW (8000 nC/mm2) it has potential applications in the area of integrated optical components such as waveguides and gratings because of its high refractive index. WL-7154 is a UV-sensitive negative resist and shows high sensitivity for PBW (4 nC/mm2). This resist could function as a mold for Ni electroplating to fabricate Ni stamps for nanoimprint- and soft-lithography. © 2007 Elsevier B.V. All rights reserved.