Please use this identifier to cite or link to this item:
|Title:||In situ STM investigation of Ge nanostructures with and without Sb on graphite||Authors:||Kushvaha, S.S.
Scanning tunneling microscopy (STM)
|Issue Date:||Apr-2006||Citation:||Kushvaha, S.S.,Yan, Z.,Xu, M.-J.,Xiao, W.,Wang, X.-S. (2006-04). In situ STM investigation of Ge nanostructures with and without Sb on graphite. Surface Review and Letters 13 (2-3) : 241-249. ScholarBank@NUS Repository.||Abstract:||Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed using in situ scanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types of Ge nanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. Compact Ge islands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-deposited Sb on graphite enhances the sticking probability and suppresses the surface diffusion of Ge atoms, resulting in a significant increase in Ge cluster island density on HOPG terraces. © World Scientific Publishing Company.||Source Title:||Surface Review and Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96895||ISSN:||0218625X|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.