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|Title:||High temperature annealing of hydrogenated amorphous silicon carbide thin films||Authors:||Wang, Y.
|Issue Date:||15-Mar-2001||Citation:||Wang, Y., Lin, J., Huan, C.H.A., Feng, Z.C., Chua, S.J. (2001-03-15). High temperature annealing of hydrogenated amorphous silicon carbide thin films. Thin Solid Films 384 (2) : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(00)01867-8||Abstract:||Hydrogenated amorphous silicon carbide thin films were prepared by plasma-enhanced chemical vapor deposition on Si substrate at 220 °C with a rf power of 50 W, the high temperature annealing effect on these films was investigated. A wide range of techniques was used to study crystal structure, and relative C/Si content of the films. Nearly stoichiometric polycrystalline 3C-SiC films were obtained from the Si-rich amorphous hydrogenated silicon carbide films after high temperature annealing in a vacuum at the temperatures above 1000 °C. With increasing temperature, the polycrystalline film becomes statistically oriented along the (100) plane, but without any obvious epitaxial relation to the Si substrate.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/96796||ISSN:||00406090||DOI:||10.1016/S0040-6090(00)01867-8|
|Appears in Collections:||Staff Publications|
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