Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(00)01867-8
Title: High temperature annealing of hydrogenated amorphous silicon carbide thin films
Authors: Wang, Y.
Lin, J. 
Huan, C.H.A. 
Feng, Z.C.
Chua, S.J.
Issue Date: 15-Mar-2001
Source: Wang, Y., Lin, J., Huan, C.H.A., Feng, Z.C., Chua, S.J. (2001-03-15). High temperature annealing of hydrogenated amorphous silicon carbide thin films. Thin Solid Films 384 (2) : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(00)01867-8
Abstract: Hydrogenated amorphous silicon carbide thin films were prepared by plasma-enhanced chemical vapor deposition on Si substrate at 220 °C with a rf power of 50 W, the high temperature annealing effect on these films was investigated. A wide range of techniques was used to study crystal structure, and relative C/Si content of the films. Nearly stoichiometric polycrystalline 3C-SiC films were obtained from the Si-rich amorphous hydrogenated silicon carbide films after high temperature annealing in a vacuum at the temperatures above 1000 °C. With increasing temperature, the polycrystalline film becomes statistically oriented along the (100) plane, but without any obvious epitaxial relation to the Si substrate.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/96796
ISSN: 00406090
DOI: 10.1016/S0040-6090(00)01867-8
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