Please use this identifier to cite or link to this item:
Title: Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
Authors: Peng, H.Y.
Li, Y.F.
Lin, W.N.
Wang, Y.Z.
Gao, X.Y. 
Wu, T.
Issue Date: 2012
Citation: Peng, H.Y., Li, Y.F., Lin, W.N., Wang, Y.Z., Gao, X.Y., Wu, T. (2012). Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation. Scientific Reports 2 : -. ScholarBank@NUS Repository.
Abstract: Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.
Source Title: Scientific Reports
ISSN: 20452322
DOI: 10.1038/srep00442
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 18, 2022


checked on Jan 18, 2022

Page view(s)

checked on Jan 13, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.