Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/96200
| Title: | Determination of the conduction band discontinuity of a semiconductor n-N heterojunction | Authors: | Kok, W.C. | Issue Date: | 2-Jan-1994 | Citation: | Kok, W.C. (1994-01-02). Determination of the conduction band discontinuity of a semiconductor n-N heterojunction. Applied Surface Science 75 (1-4) : 303-307. ScholarBank@NUS Repository. | Abstract: | A simple method is proposed from which the conduction band discontinuity energy ΔEC of a semiconductor heterojunction can be deduced. The method is applied to determine the conduction band discontinuities of various lattice-matched heterojunctions. The values of ΔEC so obtained for n-GaAs/N-A1yGa1-yAs heterojunctions with aluminium concentrations y = 0.3 and y = 0.4 and for c-Ge/GaAs, GaAs/ZnSe and c-Si/GaP heterojunctions are in reasonable agreement with those from other studies. © 1994. | Source Title: | Applied Surface Science | URI: | http://scholarbank.nus.edu.sg/handle/10635/96200 | ISSN: | 01694332 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.