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|Title:||Determination of the conduction band discontinuity of a semiconductor n-N heterojunction||Authors:||Kok, W.C.||Issue Date:||2-Jan-1994||Citation:||Kok, W.C. (1994-01-02). Determination of the conduction band discontinuity of a semiconductor n-N heterojunction. Applied Surface Science 75 (1-4) : 303-307. ScholarBank@NUS Repository.||Abstract:||A simple method is proposed from which the conduction band discontinuity energy ΔEC of a semiconductor heterojunction can be deduced. The method is applied to determine the conduction band discontinuities of various lattice-matched heterojunctions. The values of ΔEC so obtained for n-GaAs/N-A1yGa1-yAs heterojunctions with aluminium concentrations y = 0.3 and y = 0.4 and for c-Ge/GaAs, GaAs/ZnSe and c-Si/GaP heterojunctions are in reasonable agreement with those from other studies. © 1994.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/96200||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
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