Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96200
Title: Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
Authors: Kok, W.C. 
Issue Date: 2-Jan-1994
Source: Kok, W.C. (1994-01-02). Determination of the conduction band discontinuity of a semiconductor n-N heterojunction. Applied Surface Science 75 (1-4) : 303-307. ScholarBank@NUS Repository.
Abstract: A simple method is proposed from which the conduction band discontinuity energy ΔEC of a semiconductor heterojunction can be deduced. The method is applied to determine the conduction band discontinuities of various lattice-matched heterojunctions. The values of ΔEC so obtained for n-GaAs/N-A1yGa1-yAs heterojunctions with aluminium concentrations y = 0.3 and y = 0.4 and for c-Ge/GaAs, GaAs/ZnSe and c-Si/GaP heterojunctions are in reasonable agreement with those from other studies. © 1994.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96200
ISSN: 01694332
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

13
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.